CHARACTERISTICS OF DOUBLE INJECTION IN WIDE-GAP SEMICONDUCTORS.

被引：0
|
作者：
Zyuganov, A.N.
Koren', N.N.
Smertenko, P.S.
机构：
来源：
Soviet journal of communications technology & electronics | 1987年 / 32卷 / 08期
关键词：
CARRIER DOUBLE INJECTION - CUBIC I-V CHARACTERISTIC - MINORITY CURRENT-CARRIER BAND - WIDE-GAP SEMICONDUCTORS;
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摘要：
Double injection of carriers in wide-gap semiconductors, when the main charge is localized at levels interacting with the minority current-carrier band, is studied. It is shown that in this case double injection of carriers can lead to a cubic current-voltage characteristic (CVC). The possibility of the appearance of two-cubic sections, on the CVC separated by a quadratic region is also pointed out.
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页码：42 / 47
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