QUASIENERGY SPECTRUM OF A SEMICONDUCTOR WITH A VERY NARROW BAND GAP, SUBJECTED TO LASER RADIATION.

The quasienergy spectrum is determined theoretically for a two-band semiconductor which is characterized by a very narrow band gap and is subjected to high-power laser radiation. The results obtained go beyond the perturbation theory framework or the resonance approximation. The energy band structure is derived for a semiconductor subjected to intense optical fields of different intensities. It is demonstrated that a large part of the energy spectrum is deformed by such fields. Moreover, these fields reduce effectively the band gap.