LOW-ENERGY ION BEAM OXIDATION OF SILICON.

被引：0
|
作者：
Todorov, S.S. [1 ]
Shillinger, S.L. [1 ]
Fossum, Eric R. [1 ]
机构：
[1] Columbia Univ, New York, NY, USA, Columbia Univ, New York, NY, USA
来源：
Electron device letters | 1986年 / EDL-7卷 / 08期
关键词：
Integrated circuits; Thick film - ION BEAMS - Applications - Semiconductor devices; MOS; -; Substrates;
D O I：
10.1109/edl.1986.26442
中图分类号：
学科分类号：
摘要：
A low-energy oxygen ion beam with energy below 100 eV has been applied to the oxidation of unheated silicon substrates. Ultra-thin (45 angstrom) FET-gate-quality oxides have been produced for the first time at room temperature using this technique. The high electrical quality of the oxides is demonstrated by the successful fabrication of n-channel MOSFETs.
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页码：468 / 470
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