共 50 条
- [21] Time-dependent dielectric breakdown evaluation of deep trench capacitor with sidewall hemispherical, polysilicon grains for gigabit DRAM technology 2002 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP - FINAL REPORT, 2002, : 71 - 75
- [22] Information Technology in the Internet Era: Critical Theory Perspective AMCIS 2017 PROCEEDINGS, 2017,
- [23] A 0.115μm2 8F2 DRAM working cell with LPRD(Low_Prasitic_Resistance Device) and poly metal gate Technology for Gigabit DRAM 2001 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2001, : 25 - 26
- [25] The challenge of 1-gigabit DRAM development when using optical lithography OPTICAL MICROLITHOGRAPHY X, 1997, 3051 : 333 - 341
- [26] Plasma CVD of (BaSr)TiO3 Dielectrics for Gigabit DRAM Capacitors Journal of Electroceramics, 1999, 3 : 123 - 133
- [27] The electrical characteristics analysis of SiOxNy ARC for sub-0.17• •Gigabit DRAM 2001 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, PROCEEDINGS, 2001, : 38 - 41
- [28] Microstructure control of (Ba,Sr)TiO3 films for gigabit dram FERROELECTRIC THIN FILMS VI, 1998, 493 : 33 - 38