Generation-recombination noise analysis in heavily doped p-type GaAs transmission line models

被引：0
|
作者：
机构：
来源：
J Appl Phys | / 6卷 / 3046期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] HEAVILY-DOPED P-TYPE GAAS/ALGAAS SUPERLATTICES FOR INFRARED PHOTODETECTORS
    KIM, BW
    MAJERFELD, A
    GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, 1994, 136 (136): : 307 - 312
  • [32] CHARACTERIZATION OF P-TYPE GAAS HEAVILY DOPED WITH CARBON GROWN BY METALLORGANIC MBE
    SAITO, K
    TOKUMITSU, E
    AKATSUKA, T
    MIYAUCHI, M
    YAMADA, T
    KONAGAI, M
    TAKAHASHI, K
    INSTITUTE OF PHYSICS CONFERENCE SERIES <D>, 1989, (96): : 69 - 72
  • [33] HOLE-PLASMON DAMPING ON HEAVILY DOPED P-TYPE GAAS(110)
    BIAGI, R
    MARIANI, C
    DELPENNINO, U
    PHYSICAL REVIEW B, 1992, 46 (04): : 2467 - 2472
  • [34] GAAS PN DIODES WITH HEAVILY CARBON-DOPED P-TYPE GAAS GROWN BY MOMBE
    NOZAKI, S
    MIYAKE, R
    YAMADA, T
    KONAGAI, M
    TAKAHASHI, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (10): : L1731 - L1734
  • [35] Analysis and modelling of generation-recombination noise in amorphous semiconductors
    Badran, RI
    Main, C
    Reynolds, S
    THIN SOLID FILMS, 2003, 427 (1-2) : 133 - 136
  • [36] Generation-recombination noise in uniformly doped semiconductors with contacts of finite surface recombination velocities
    Park, Chan Hyeong
    JOURNAL OF APPLIED PHYSICS, 2022, 132 (21)
  • [37] Heavily p-type doped ZnSe and ZnBeSe
    Kuskovsky, IL
    Gu, Y
    Tian, C
    Neumark, GF
    Guo, SP
    Lin, W
    Maksimov, O
    Tamargo, MC
    Alyoshin, AN
    Belous, VM
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2002, 229 (01): : 385 - 389
  • [38] MAGNETORESISTANCE AND LONGITUDINAL NERNST-ETTINGSHAUSEN EFFECT IN HEAVILY DOPED P-TYPE GAAS
    EMELYANENKO, OV
    NASLEDOV, DN
    URMANOV, NA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (08): : 1049 - +
  • [39] Defect luminescence in heavily Si-doped n- and p-type GaAs
    Ha, YK
    Lee, C
    Kim, JE
    Park, HY
    Kim, SB
    Lim, H
    Kim, BC
    Lee, HC
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2000, 36 (01) : 42 - 48
  • [40] SURFACE RECOMBINATION VELOCITY IN P-TYPE GAAS
    ITO, H
    ISHIBASHI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1994, 33 (1A): : 88 - 89
12345