Generation-recombination noise analysis in heavily doped p-type GaAs transmission line models

被引:0
|
作者
机构
来源
J Appl Phys | / 6卷 / 3046期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] MOS MEASUREMENTS OF GENERATION-RECOMBINATION BEHAVIOR IN HEAVILY DOPED DIFFUSED LAYERS
    JONES, E
    BARBER, HD
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (08) : C214 - &
  • [22] RADIATIVE RECOMBINATION IN SILICON-DOPED P-TYPE GAAS
    SUSHKOV, VP
    LYUBYANI.EB
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (12): : 1974 - &
  • [23] RECTIFICATION IN HEAVILY DOPED P-TYPE GAAS/ALAS HETEROJUNCTIONS - COMMENT
    ZEEB, E
    EBELING, KJ
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (11) : 5729 - 5729
  • [24] CHARACTERISTICS OF DISTRIBUTION OF DENSITY OF STATES IN HEAVILY DOPED P-TYPE GAAS
    ABDURAKHMANOV, KP
    MIRAKHMEDOV, S
    TESHABAEV, A
    KHUDAIBERDIEV, SS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (04): : 393 - 397
  • [25] ELECTRICAL MEASUREMENTS OF BANDGAP SHRINKAGE IN HEAVILY DOPED P-TYPE GAAS
    KLAUSMEIERBROWN, ME
    MELLOCH, MR
    LUNDSTROM, MS
    JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (01) : 7 - 11
  • [26] PHOTOLUMINESCENCE OF COMPLEXES IN EPITAXIAL P-TYPE GAAS HEAVILY DOPED WITH GERMANIUM
    ZHURAVLEV, KS
    TEREKHOV, AS
    YAKUSHEVA, NA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (05): : 491 - 492
  • [27] Deep-defect related generation-recombination noise in GaAs
    Seghier, D
    Arinbjarnason, TM
    Gislason, HP
    SMIC-XIII: 2004 13th International Conference on Semiconducting & Insulating Materials, 2004, : 234 - 237
  • [28] CHARACTERIZATION OF P-TYPE GAAS HEAVILY DOPED WITH CARBON GROWN BY METALLORGANIC MBE
    SAITO, K
    TOKUMITSU, E
    AKATSUKA, T
    MIYAUCHI, M
    YAMADA, T
    KONAGAI, M
    TAKAHASHI, K
    GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988, 1989, : 69 - 72
  • [29] INVESTIGATION OF THE PLASMON EXCITATION ON HEAVILY DOPED P-TYPE GAAS(110) SURFACE
    DELPENNINO, U
    BIAGI, R
    MARIANI, C
    APPLIED SURFACE SCIENCE, 1992, 56-8 : 44 - 49
  • [30] Spectroscopy studies of p-type GaAs/AlGaAs MQWs heavily doped with carbon
    Astratov, VN
    Karimov, OZ
    Vlasov, YA
    Mao, E
    Dickey, S
    Kim, BW
    Majerfeld, A
    COMPOUND SEMICONDUCTORS 1996, 1997, (155): : 1001 - 1004