共 50 条
- [22] RADIATIVE RECOMBINATION IN SILICON-DOPED P-TYPE GAAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (12): : 1974 - &
- [24] CHARACTERISTICS OF DISTRIBUTION OF DENSITY OF STATES IN HEAVILY DOPED P-TYPE GAAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (04): : 393 - 397
- [26] PHOTOLUMINESCENCE OF COMPLEXES IN EPITAXIAL P-TYPE GAAS HEAVILY DOPED WITH GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (05): : 491 - 492
- [27] Deep-defect related generation-recombination noise in GaAs SMIC-XIII: 2004 13th International Conference on Semiconducting & Insulating Materials, 2004, : 234 - 237
- [28] CHARACTERIZATION OF P-TYPE GAAS HEAVILY DOPED WITH CARBON GROWN BY METALLORGANIC MBE GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988, 1989, : 69 - 72
- [30] Spectroscopy studies of p-type GaAs/AlGaAs MQWs heavily doped with carbon COMPOUND SEMICONDUCTORS 1996, 1997, (155): : 1001 - 1004