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- [3] GENERATION-RECOMBINATION NOISE IN P-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (05): : 550 - +
- [6] RADIATIVE RECOMBINATION IN HEAVILY DOPED P-TYPE GAAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (10): : 1273 - &
- [8] RADIATIVE RECOMBINATION IN LIGHTLY AND HEAVILY DOPED P-TYPE GAAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (08): : 1012 - +
- [9] LIFETIME OF NONEQUILIBRIUM CARRIERS AND GENERATION-RECOMBINATION NOISE IN P-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (10): : 1317 - 1319
- [10] GENERATION-RECOMBINATION NOISE IN P-TYPE INSB AT 78 DEGREES K SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (04): : 547 - 548