Characterization of interfaces of directly bonded silicon wafers: a comparative study of secondary ion mass spectroscopy multiple internal reflection spectroscopy, and transmission electron microscopy

被引：0

作者：

Reiche, Manfred ^{[1
]}

Hopfe, Sigrid ^{[1
]}

Goesele, Ullrich ^{[1
]}

Strutzberg, Hartmut ^{[1
]}

Tong, Qin-Yi ^{[1
]}

机构：

[1] Max-Planck-Inst fuer, Mikrostrukturphysik, Halle, Germany

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1996年 / 35卷 / 4 A期

关键词：

Annealing - Characterization - Chemical bonds - Crystal growth from melt - Fourier transform infrared spectroscopy - Infrared spectrometers - Interfaces (materials) - Mechanical properties - Physical properties - Secondary ion mass spectrometry - Transmission electron microscopy;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The structure and chemistry of interfaces of directly bonded Si/Si wafer pairs after annealing at 1100°C were investigated by secondary ion mass spectroscopy (SIMS), multiple internal reflection spectroscopy (MIRS), and high resolution electron microscopy (HRTEM). Si-O, SiO-H, and Si-Hx bonds are shown to be the main atomic bonds at the interfaces of bonded hydrophilic wafer pairs, whereas Si-Si and Si-Hx bonds are dominant at interfaces of bonded hydrophobic wafer pairs. For bonded hydrophobic wafer pairs a frequency shift of the Si-Hx modes suggest that fluorine is probably present in Si-F&middot &middot &middotH-Si configurations. Strongly oriented SiO-H modes detected in bonded hydrophobic wafer pairs appear to be related to oxide islands at the interface.

引用

页码：2102 / 2107