Sub-100-nm-scale patterning using a low-energy electron beam

被引：0

作者：

Ishii, Kiyoshi ^{[1
]}

Matsuda, Tadahito ^{[1
]}

机构：

[1] NTT LSI Lab, Kanagawa, Japan

来源：

Japanese Journal of Applied Physics, Part 2: Letters | 1992年 / 31卷 / 6 A期

关键词：

Electron Beams - Applications - Electrons - Sources - Polymethyl Methacrylates - Imaging Techniques - Semiconductor Devices; Schottky Barrier;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

This study explores the feasibility of nanometer-scale patterning using a low-energy electron beam. Improved resolution results from low-energy electron beam generation by a retarding field optical column with a Zr/W Schottky electron (SE) source. The beam is focused to 17 nm with a current of 100 pA at an energy of 2 keV. The 2-keV electron beam is used to expose a 50-nm-thick poly(methylmethacrylate) (PMMA) resist on a Si substrate. A 95-nm line-and-space pattern can be produced by carefully controlling the exposure dose.

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