SPIN-DEPENDENT RECOMBINATION AND CONDUCTIVITY AS MEANS OF EXAMINING DISLOCATIONS IN SEMICONDUCTORS.

被引：0

作者：

Kveder, V.V.

Osip'yan, Yu.A.

机构：

来源：

Bulletin of the Academy of Sciences of the U.S.S.R. Physical series | 1986年 / 51卷 / 04期

关键词：

CRYSTALS - Dislocations - ELECTRIC CONDUCTIVITY;

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摘要：

Dislocations in silicon have been examined by spin-dependent recombination methods for photoexcited electrons and holes together with combined spin resonance for electrons trapped in a one-dimensional band corresponding to one of the types of reconstructed dislocation.

引用

页码：1 / 7

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[1] SPIN-DEPENDENT RECOMBINATION AND CONDUCTIVITY AS THE METHOD FOR STUDYING DISLOCATIONS IN SEMICONDUCTORS
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[2] Spin-dependent recombination in semiconductors
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[9] INVESTIGATION OF SPIN-DEPENDENT RECOMBINATION AT DISLOCATIONS IN SILICON
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[10] SPIN-DEPENDENT RECOMBINATION AND OPTICAL SPIN ORIENTATION IN SEMICONDUCTORS
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