High quality CdTe/Cd1-xMgxTe quantum wells grown on GaAs (100) and (111) substrates by molecular-beam epitaxy

被引：0
作者：
机构：
来源：
J Vac Sci Technol B | / 3卷 / 2374期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
[31]   DEPTH PROFILES OF DEFECTS IN CDTE(100) OVERLAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS(100) [J].
RAUHALA, E ;
KEINONEN, J ;
RAKENNUS, K ;
PESSA, M .
APPLIED PHYSICS LETTERS, 1987, 51 (13) :973-974
[32]   INVESTIGATION OF HIGH IN CONTENT INGAAS QUANTUM-WELLS GROWN ON GAAS BY MOLECULAR-BEAM EPITAXY [J].
LORD, SM ;
PEZESHKI, B ;
JUN, JSH .
ELECTRONICS LETTERS, 1992, 28 (13) :1193-1195
[33]   MUCH IMPROVED INTERFACES IN GAAS/ALAS QUANTUM-WELLS GROWN ON (411)A GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].
SHIMOMURA, S ;
SHINOHARA, K ;
KITADA, T ;
HIYAMIZU, S ;
TSUDA, Y ;
SANO, N ;
ADACHI, A ;
OKAMOTO, Y .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (02) :696-698
[34]   EXTREMELY FLAT INTERFACES IN GAAS ALGAAS QUANTUM-WELLS GROWN ON GAAS (411) A SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].
SHIMOMURA, S ;
WAKEJIMA, A ;
ADACHI, A ;
OKAMOTO, Y ;
SANO, N ;
MURASE, K ;
HIYAMIZU, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (12A) :L1728-L1731
[35]   CDZNTE/ZNTE AND HGCDTE/CDTE QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J].
FELDMAN, RD .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (03) :1888-1893
[36]   THE GROWTH OF HIGH-QUALITY CDTE ON GAAS BY MOLECULAR-BEAM EPITAXY [J].
RENO, JL ;
CARR, MJ ;
GOURLEY, PL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (02) :1006-1012
[37]   AN INVESTIGATION OF INXGA1-XAS/GAAS QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J].
JEONG, J ;
SHAHID, MA ;
LEE, JC ;
SCHLESINGER, TE ;
MILNES, AG .
JOURNAL OF APPLIED PHYSICS, 1988, 63 (11) :5464-5468
[38]   High-quality PbTe/CdTe growth on GaAs(100) substrates by molecular beam epitaxy [J].
Koike, K ;
Tanaka, T ;
Yano, M .
PROCEEDINGS OF THE 10TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND RELATED SMALL ENERGY PHENOMENA, PHYSICS AND APPLICATIONS, 2001, 2 :39-41
[39]   LAYERS OF INXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY ON SUBSTRATES OF (100) GAAS [J].
DVORYANKINA, GG ;
DVORYANKIN, VF ;
PETROV, AG ;
POROTIKOV, AP ;
KUDRYASHOV, AA ;
ORMONT, AB ;
VARAKSIN, GA ;
DLUGACH, LB .
INORGANIC MATERIALS, 1988, 24 (07) :920-924
[40]   Terahertz response of CdTe/Cd1-xMgxTe modulation-doped multiple quantum wells [J].
Lusakowski, Jerzy ;
Fraczak, Andrzej ;
Grymuza, Mikolaj ;
Imos, Eryk ;
Siemaszko, Adam ;
Solarska, Wiktoria ;
Woyciechowska, Aniela ;
Zaremba, Maciej ;
Zdunek, Rafal ;
Karpierz, Krzysztof ;
Adamus, Zbigniew ;
Slupinski, Tomasz ;
Wojtowicz, Tomasz .
OPTO-ELECTRONICS REVIEW, 2023, 31 (02)
12345