10μm-region infrared detectors

被引：0
|
作者：
Hibino, Masahiro [1 ]
Hisa, Yoshihiro [1 ]
Yoshida, Yasuaki [1 ]
机构：
[1] LSI Research & Development Lab, Japan
来源：
Mitsubishi Electric Advance | 1988年 / 44卷
关键词：
Photoconducting Materials;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Infrared detectors in the 10μm infrared band are useful as detectors of objects at room temperatures. Group II-VI compound crystalline semiconductors with chemical formula Cd0.2Hg0.8 Te are often used for this purpose. However, the mercury tends to dissociate from the crystal at temperatures above 100°C, with the associated problem of degraded device performance. Our investigation of low-temperature processes and optimized film formation has led to the development of high-performance photoconductive infrared detectors.
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页码：20 / 21
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