Ion-channeling and Raman scattering study of damage accumulation in silicon

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作者：
Johnson, B.C. [1 ]
McCallum, J.C. [1 ]
机构：
[1] School of Physics, University of Melbourne, Melbourne, Vic. 3010, Australia
来源：
Journal of Applied Physics | 1600年 / 95卷 / 03期
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(Edited Abstract)
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页码：1096 / 1101
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