Silicon avalanche photodiodes with n-p-i-p structures for fiber-optical systems

The mechanism of operation of the avalanche photodiode (APD) with an n-p-i-p structure, its parameters and characteristics are discussed. It has been shown that silicon APDs with n-p-i-p structures are the best photoreceivers for fiber-optical transmission systems with λ = 0.85 μm. The relation between the parameters of the n-p-i-p structure and the fundamental photoelectric parameters is established. The optimum parameters of the n-p-i-p structure are determined.