Low frequency excess noise measurements in high frequency polysilicon emitter bipolar transistors

被引：0
|
作者：
Groupement de Rech. en Informatique, Intell. Artificielle Instrum. C., Caen, France [1 ]
不详 [2 ]
机构：
来源：
Solid-State Electron. | / 4卷 / 729-740期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] STRONG LOW-FREQUENCY NOISE IN POLYSILICON EMITTER BIPOLAR-TRANSISTORS WITH INTERFACIAL OXIDE DUE TO FLUCTUATIONS IN TUNNELING PROBABILITIES
    LAU, WS
    CHOR, EF
    FOO, CS
    KHOONG, WC
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (8A): : L1021 - L1023
  • [22] Low-frequency noise of the quasi-neutral emitter region of bipolar transistors
    Kolomoets, GP
    Tkachenko, NN
    MEASUREMENT TECHNIQUES, 1997, 40 (01) : 91 - 93
  • [23] Low-Frequency Noise of the Quasi-Neutral Emitter Region of Bipolar Transistors
    Kolomoets, G. P.
    Tkachenko, N. N.
    Measurement Techniques (English translation of Izmeritel'naya Tekhnika), 40 (01):
  • [24] Low-frequency noise of the quasi-neutral emitter region of bipolar transistors
    G. P. Kolomoets
    N. N. Tkachenko
    Measurement Techniques, 1997, 40 : 91 - 93
  • [25] Statistical simulations of the low-frequency noise in polysilicon emitter bipolar transistors using a model based on generation-recombination centers
    Sanden, Martin
    Ostling, Mikael
    Marinov, Ognian
    Deen, M. Jamal
    FLUCTUATION AND NOISE LETTERS, 2001, 1 (02): : L51 - L60
  • [26] Size effects on the DC characteristics and low frequency noise of double polysilicon NPN bipolar transistors
    Valdaperez, N
    Routoure, JM
    Bloyet, D
    Carin, R
    Bardy, S
    MICROELECTRONICS RELIABILITY, 2005, 45 (7-8) : 1167 - 1173
  • [27] A novel method for base and emitter resistance extraction in bipolar junction transistors from static and low frequency noise measurements
    Llinares, P
    Ghibaudo, G
    Gambetta, N
    Mourier, Y
    Monroy, A
    Lecoy, G
    Chroboczek, JA
    ICMTS 1998: PROCEEDINGS OF THE 1998 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, 1998, : 67 - 71
  • [28] On the origin of 1/f noise in polysilicon emitter bipolar transistors
    Deen, MJ
    Rumyantsev, SL
    Schroter, M
    JOURNAL OF APPLIED PHYSICS, 1999, 85 (02) : 1192 - 1195
  • [29] Low Frequency Noise temperature measurements in SiGe:C Heterojunction Bipolar Transistors
    Seif, M.
    Pascal, F.
    Sagnes, B.
    Hoffmann, A.
    Haendler, S.
    Chevalier, P.
    Gloria, D.
    2015 INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF), 2015,
  • [30] On the modeling of polysilicon emitter bipolar transistors
    Rinaldi, NF
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (03) : 395 - 403
12345