Analysis of Triggering Operating Conditions in a Quartz Resonator with Capacitance Control of a p-n Junction.

被引：0

作者：

Loza, Yu.Kh.

Molchanov, A.A.

Yalovega, G.I.

机构：

来源：

Izvestiya Vysshikh Uchebnykh Zavedenij. Radioelektronika | 1974年 / 17卷 / 12期

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D O I：

暂无

中图分类号：

TN7 [基本电子电路];

学科分类号：

080902 ;

摘要：

2 refs. In Russian.

引用

页码：90 / 92

共 50 条

[1] COMPUTER AIDED ANALYSIS OF A p-n JUNCTION.
Jain, L.C.
Journal of the Institution of Engineers (India), Part ET: Electronics & Telecommunication Engineering Division, 1980, 61 (pt ET 2): : 53 - 54
[2] PERIPHERAL PHOTORESPONSE OF A p-n JUNCTION.
Holloway, H.
Brailsford, A.D.
Journal of Applied Physics, 1983, 54 (08): : 4641 - 4656
[3] Theory and Calculation of the Phase Modulation Bridge by Means of the Capacitance of the p-n Junction.
Shakhmaev, M.M.
Trefilov, A.L.
Izvestiya Vysshikh Uchebnykh Zavedenij. Radioelektronika, 1975, 18 (05): : 37 - 41
[4] P-N JUNCTION CAPACITANCE
SMITH, WR
INTERNATIONAL JOURNAL OF ELECTRONICS, 1971, 31 (03) : 201 - &
[5] Photothyristors with Zener Breakdown of the Central p-n Junction.
Kletchenkov, I.I.
Shmyreva, A.N.
Izvestiya Vysshikh Uchebnykh Zavedenij. Radioelektronika, 1974, 17 (12): : 100 - 102
[6] BREAKDOWN VOLTAGE OF THE FIELD CONTROLLED P-N JUNCTION.
YUSHU, LIU
1982, V 3 (N 5): : 395 - 403
[7] CHARACTERISTICS AND JUNCTION CAPACITANCE OF SIC P-N JUNCTION
NAKASHIM.H
SUGANO, T
YANAI, H
ELECTRICAL ENGINEERING IN JAPAN, 1965, 85 (02) : 1 - &
[8] CAPACITANCE OF A P-N JUNCTION WITH DEEP IMPURITIES
PEREL, VI
EFROS, AL
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (11): : 1403 - +
[9] PHOTOMAGNETIC CURRENT GENERATED BY FRONT ILLUMINATION OF A P-N JUNCTION.
Zhad'ko, I.P.
Romanov, V.A.
1978, 12 (09): : 1059 - 1062
[10] TOWARD MOLECULAR ELECTRONICS. AN INTRAMOLECULAR P-N JUNCTION.
Langer, J.J.
Uler, E.
Golankiewicz, K.
Applied Physics A: Solids and Surfaces, 1987, A43 (02): : 139 - 141

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