Lattice location of ion-implanted Ga, Ge, and Se in InP

被引：0
|
作者：
机构：
来源：
| 1748年 / 71期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] THE LATTICE LOCATION OF ION-IMPLANTED GA, GE, AND SE IN INP
    KRINGHOJ, P
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (04) : 1748 - 1752
  • [2] LATTICE LOCATION AND ELECTRICAL-ACTIVITY OF ION-IMPLANTED SN IN INP
    KRINGHOJ, P
    WEYER, G
    APPLIED PHYSICS LETTERS, 1993, 62 (16) : 1973 - 1975
  • [3] CHANNELING LATTICE LOCATION OF SE IMPLANTED INTO INP BY RBS AND PIXE
    XIAO, QF
    HASHIMOTO, S
    GIBSON, WM
    PEARTON, SJ
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1990, 45 (1-4): : 464 - 466
  • [4] IMPURITY LATTICE LOCATION IN ION-IMPLANTED BERYLLIUM - MEASUREMENTS AND SYSTEMATICS
    VIANDEN, R
    KAUFMANN, EN
    RODGERS, JW
    PHYSICAL REVIEW B, 1980, 22 (01): : 63 - 79
  • [5] RADIATION DISORDER AND LATTICE LOCATION IN ION-IMPLANTED ALUMINUM CRYSTALS
    HUSSAIN, T
    LINKER, G
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 51 (1-2): : 103 - 110
  • [6] LATTICE LOCATION OF ION-IMPLANTED RADIOACTIVE DOPANTS IN COMPOUND SEMICONDUCTORS
    WINTER, S
    BLASSER, S
    HOFSASS, H
    JAHN, S
    LINDNER, G
    WAHL, U
    RECKNAGEL, E
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1990, 48 (1-4): : 211 - 215
  • [7] LATTICE LOCATION OF ION-IMPLANTED HE-3 IN SAPPHIRE
    ALLEN, WR
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 61 (03): : 325 - 336
  • [8] ION-IMPLANTED SE IN GAAS
    LIDOW, A
    GIBBONS, JF
    DELINE, VR
    EVANS, CA
    JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4130 - 4138
  • [9] DEFECT RECOVERY OF ION-IMPLANTED INP
    WEYER, G
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 96 (1-2): : 315 - 318
  • [10] ELECTROCHEMICAL PROFILING OF ION-IMPLANTED INP
    BAHIR, G
    MERZ, JL
    ABELSON, JR
    SIGMON, TW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (09) : 2187 - 2193
12345