Noise and speed characteristics of test transistors and charge amplifiers designed using a submicron CMOS technology

被引：0
作者：
Santiard, J.C. [1 ]
Faccio, F. [1 ]
机构：
[1] CERN, Geneva, Switzerland
来源：
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 1996年 / 380卷 / 1-2期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
5
引用
收藏
页码：350 / 352
相关论文
共 50 条
  • [21] Narrow and broadband low-noise amplifiers at higher frequency using FDSOI CMOS technology
    Mattamana, A
    Axtell, H
    Cerny, C
    Creech, G
    James, T
    Mbuko, I
    Neidhard, R
    Orlando, P
    Patel, VJ
    Selke, D
    Quach, T
    2006 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS, 2006, : 155 - +
  • [22] Effect of technology scaling on the 1/f noise of deep submicron PMOS transistors
    Chew, KW
    Yeo, KS
    Chu, SF
    SOLID-STATE ELECTRONICS, 2004, 48 (07) : 1101 - 1109
  • [23] Efficient transimpedance amplifiers using digital CMOS technology
    Wang, JQ
    Wang, CY
    2000 CANADIAN CONFERENCE ON ELECTRICAL AND COMPUTER ENGINEERING, CONFERENCE PROCEEDINGS, VOLS 1 AND 2: NAVIGATING TO A NEW ERA, 2000, : 412 - 415
  • [24] 1/f noise in deep submicron CMOS technology for RF and analogue applications
    Mercha, A
    Simoen, E
    Decoutere, S
    Claeys, C
    NOISE IN DEVICES AND CIRCUITS II, 2004, 5470 : 193 - 207
  • [25] Investigation of substrate noise isolation solutions in deep submicron (DSM) CMOS technology
    Lin, Henry
    Kuo, James
    Sobot, Robert
    Syrzycki, Marek
    2007 CANADIAN CONFERENCE ON ELECTRICAL AND COMPUTER ENGINEERING, VOLS 1-3, 2007, : 1106 - 1109
  • [26] INVESTIGATIONS OF NOISE IN AUDIO FREQUENCY AMPLIFIERS USING JUNCTION TRANSISTORS
    BARGELLINI, PM
    HERSCHER, MB
    PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1955, 43 (02): : 217 - 226
  • [27] LOW-NOISE OPERATIONAL-AMPLIFIERS USING BIPOLAR INPUT TRANSISTORS IN A STANDARD METAL GATE CMOS PROCESS
    GUSTAFSSON, S
    SUNDBLAD, R
    SVENSSON, C
    ELECTRONICS LETTERS, 1984, 20 (13) : 563 - 564
  • [28] Numerical simulation and modeling of static characteristics and electrical noise in submicron MOS transistors
    Fadlallah, M
    Ghibaudo, G
    Jomaah, J
    Zoaeter, R
    ICECS 2000: 7TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS & SYSTEMS, VOLS I AND II, 2000, : 940 - 943
  • [29] 1/f noise characterization in CMOS transistors in 0.13μm technology
    Citakovic, Jelena
    Stenberg, Lars J.
    Andreani, Pietro
    24TH NORCHIP CONFERENCE, PROCEEDINGS, 2006, : 81 - +
  • [30] Improvements to CBCM (Charge-Based Capacitance Measurement) for deep submicron CMOS technology
    Bach, Randy
    Davis, Bob
    Laubhan, Rich
    ISQED 2006: PROCEEDINGS OF THE 7TH INTERNATIONAL SYMPOSIUM ON QUALITY ELECTRONIC DESIGN, 2006, : 324 - +
12345