Noise and speed characteristics of test transistors and charge amplifiers designed using a submicron CMOS technology

被引：0
作者：
Santiard, J.C. [1 ]
Faccio, F. [1 ]
机构：
[1] CERN, Geneva, Switzerland
来源：
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 1996年 / 380卷 / 1-2期
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摘要：
5
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页码：350 / 352
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