SELECTIVE EXCITATION OF WAVEGUIDE MODES AND MEASUREMENT OF THE PARAMETERS OF AlxGa1 -xAs-GaAs FILM HETEROSTRUCTURES INTENDED FOR INTEGRATED OPTICS APPLICATIONS.

被引：0

作者：

Bykovskii, Yu.A.

Makovkin, A.V.

Smirnov, V.L.

机构：

来源：

| 1975年 / 4卷 / 08期

关键词：

INTEGRATED OPTICS;

D O I：

10.1070/qe1975v004n08abeh011162

中图分类号：

学科分类号：

摘要：

An investigation is made of a method for effective coupling of laser radiation ( lambda equals 1. 15 mu ) by a prism into thin (5 - 15 mu ) GaAs films grown epitaxially on Al//xGa//1// minus //xAs substrates. Waveguide modes are excited selectively. The optical parameters of the waveguides are deduced from the measured phase-matching angles of the excited modes.

引用

页码：1050 / 1051