MOS TRANSMISSION LINE AS A NEW DEVICE FOR THE IMPLEMENTATION OF LARGE-SCALE INTEGRATION.

被引：0
|
作者：
Hoffmann, Kurt
机构：
来源：
Siemens Forschungs- und Entwicklungsberichte/Siemens Research and Development Reports | 1976年 / 5卷 / 06期
关键词：
DATA STORAGE; SEMICONDUCTOR - INTEGRATED CIRCUITS - Large Scale Integration;
D O I：
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中图分类号：
学科分类号：
摘要：
A MOS transmission line similar to a MOS capacitor operating in the deep depletion mode is described. Its long high-resistivity gate electrode has a contact at each end to which different gate voltages can be applied such as to cause a drift field. The charge transport properties of the MOS transmission line are investigated theoretically and confirmed by experiments. Finally the use of the MOS transmission line for increasing the level of integration of memories composed of single-transistor cells is discussed.
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页码：327 / 331
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