DELOCALIZATION OF H - -LIKE IMPURITY STATES AND FORMATION OF BAND TYPE IMPURITY CONDUCTIVITY IN SEMICONDUCTORS.

被引：0
|
作者：
Gershenson, E.M.
Mel'nikov, A.P.
Murzin, V.N.
Rabinovich, R.I.
Trofimov, I.E.
机构：
来源：
Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics | 1982年 / 117-118卷 / Pt I期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
9
引用
收藏
页码：257 / 259
相关论文
共 50 条
  • [1] DELOCALIZATION OF H- -LIKE IMPURITY STATES AND FORMATION OF BAND TYPE IMPURITY CONDUCTIVITY IN SEMICONDUCTORS
    GERSHENSON, EM
    MELNIKOV, AP
    MURZIN, VN
    RABINOVICH, RI
    TROFIMOV, IE
    PHYSICA B & C, 1983, 117 (MAR): : 257 - 259
  • [2] SOME PROPERTIES OF AN IMPURITY BAND OF SEMICONDUCTORS.
    Dolgov, E.L.
    Dugaev, V.K.
    Petrov, P.P.
    1978, 20 (06): : 945 - 947
  • [3] IMPURITY-TO-BAND TUNNELING IN SEMICONDUCTORS.
    Chaudhuri, S.
    Coon, D.D.
    Karunasiri, R.P.G.
    1600, (54):
  • [4] OBSERVATION OF THE DELOCALIZATION THRESHOLD OF THE H--LIKE STATES OF IMPURITY CENTERS IN DOPED SEMICONDUCTORS
    GERSHENZON, EM
    ZAYATS, VA
    MELNIKOV, AP
    RABINOVICH, RI
    SEREBRYAKOVA, NA
    TOVMACH, YV
    JETP LETTERS, 1980, 32 (05) : 320 - 323
  • [5] IMPURITY CONDUCTION IN SEMICONDUCTORS.
    Chroboczek, J.A.
    1987, : 109 - 167
  • [6] IMPURITY BAND AND CONDUCTIVITY OF COMPENSATED SEMICONDUCTORS
    SHKLOVSKII, BI
    EFROS, AL
    SOVIET PHYSICS JETP-USSR, 1971, 33 (02): : 468 - +
  • [7] IMPURITY LEVELS IN FERROMAGNETIC SEMICONDUCTORS.
    Irkhin, V.Yu.
    Katsnel'son, M.I.
    Soviet Physics, Solid State (English translation of Fizika Tverdogo Tela), 1984, 26 (10): : 1841 - 1845
  • [8] IMPURITY SCATTERING IN MAGNETIC SEMICONDUCTORS.
    Vigren, D.T.
    Kuebler, J.
    1975, : 189 - 193
  • [9] CALCULATION OF CONDUCTIVITY OF IMPURITY BAND CONDUCTION IN SEMICONDUCTORS
    KLAWITER, WF
    NAKAI, S
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1970, 15 (03): : 304 - &
  • [10] OPTICAL CONDUCTIVITY IN THE IMPURITY BAND OF DOPED SEMICONDUCTORS
    GRYKO, J
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 117 (01): : 313 - 322
12345