Properties of Ga1-xInxN films prepared by MOVPE

被引：0

作者：

Nagatomo, Takao ^{[1
]}

Kuboyama, Takeshi ^{[1
]}

Minamino, Hiroyuki ^{[1
]}

Omoto, Osamu ^{[1
]}

机构：

[1] Shibaura Inst of Technology, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1989年 / 28卷 / 08期

关键词：

Electric Properties - Optical Properties - Sapphire--Substrates - Semiconducting Films--Physical Properties - Semiconductor Materials--Structure;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Epitaxial films of the solid solution Ga1-xInxN (up to X=0.42) have been fabricated on (0001) sapphire substrates by metalorganic vapor phase epitaxy (MOVPE) at 500°C. The properties of the films have been studied by the reflection high-energy electron diffraction technique, X-ray diffraction, and electrical and optical measurements. The fundamental absorption edge of the film decreases linearly with composition (up to X=0.42) from 3.20 eV at room temperature.

引用

页码：1334 / 1336

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