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- [34] Properties of n- and p-channel mosfets with ultrathin RTCVD oxynitride gate dielectrics SILICON NITRIDE AND SILICON DIOXIDE THIN INSULATING FILMS, 1999, 99 (06): : 90 - 105
- [40] PERFORMANCE AND RELIABILITY OF SHORT-CHANNEL MOSFETS WITH SUPERIOR OXYNITRIDE GATE DIELECTRICS FABRICATED USING MULTIPLE RAPID THERMAL-PROCESSING 1989 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS: PROCEEDINGS OF TECHNICAL PAPERS, 1989, : 197 - 201