Improving performance with oxynitride gate dielectrics

被引：0
|
作者：
Leonarduzzi, Gianni D. [1 ]
Kwong, Dim-Lee [1 ]
机构：
[1] Scott Speciality Gases Inc, Austin, United States
来源：
Semiconductor International | 1998年 / 21卷 / 08期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：225 / 226
相关论文
共 50 条
  • [1] RADIATION EFFECTS ON OXYNITRIDE GATE DIELECTRICS
    PANCHOLY, RK
    ERDMANN, FM
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) : 4141 - 4145
  • [2] Cu contamination effect in oxynitride gate dielectrics
    Lin, YH
    Pan, FM
    Liao, YC
    Chen, YC
    Hsieh, IJ
    Chin, A
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2001, 148 (11) : G627 - G629
  • [3] OXYNITRIDE GATE DIELECTRICS FOR P(+)-POLYSILICON GATE MOS DEVICES
    JOSHI, AB
    AHN, J
    KWONG, DL
    IEEE ELECTRON DEVICE LETTERS, 1993, 14 (12) : 560 - 562
  • [4] Soft breakdown of hafnium oxynitride gate dielectrics
    Wang, J.C. (jcwang.ee87g@nctu.edu.tw), 1600, American Institute of Physics Inc. (98):
  • [5] Soft breakdown of hafnium oxynitride gate dielectrics
    Wang, JC
    Shie, DC
    Lei, TF
    Lee, CL
    JOURNAL OF APPLIED PHYSICS, 2005, 98 (02)
  • [6] Hyperthermal nitridation for ultrathin silicon oxynitride gate dielectrics
    Krug, C
    Baumvol, IJR
    Stedile, FC
    Green, ML
    Klemens, F
    Silverman, PJ
    Sorsch, TW
    Alvarez, F
    Hammer, P
    Victoria, NM
    PHYSICS AND CHEMISTRY OF SIO2 AND THE SI-SIO2 INTERFACE - 4, 2000, 2000 (02): : 187 - 197
  • [7] Phosphorus diffusion in silicon oxide and oxynitride gate dielectrics
    Ellis, KA
    Buhrman, RA
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 1999, 2 (10) : 516 - 518
  • [8] RELIABILITY ISSUES IN SUBMICRON MOSFETS WITH OXYNITRIDE GATE DIELECTRICS
    JOSHI, AB
    KWONG, DL
    MICROELECTRONICS AND RELIABILITY, 1993, 33 (11-12): : 1845 - 1866
  • [9] The structure and electronic properties of silicon oxynitride gate dielectrics
    Plucinski, KJ
    Kityk, IV
    Kasperczyk, J
    Sahraoui, B
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2001, 16 (06) : 467 - 470
  • [10] RECENT DEVELOPMENTS IN ULTRA-THIN OXYNITRIDE GATE DIELECTRICS
    HAN, LK
    BHAT, M
    WRISTERS, D
    WANG, HH
    KWONG, DL
    MICROELECTRONIC ENGINEERING, 1995, 28 (1-4) : 89 - 96
12345