Impact of the device scaling on the low-frequency noise in n-MOSFETs

被引：0
|
作者：
Bu, H.M. [1 ]
Shi, Y. [1 ]
Yuan, X.L. [1 ]
Zheng, Y.D. [1 ]
Gu, S.H. [2 ]
Majima, H. [3 ]
Ishikuro, H. [3 ]
Hiramoto, T. [3 ]
机构：
[1] Department of Physics, Nanjing University, Nanjing 210093, China
[2] Nanjing Electronic Devices Institute, Nanjing 210016, China
[3] Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Tokyo 106, Japan
来源：
Applied Physics A: Materials Science and Processing | 2000年 / 71卷 / 02期
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摘要：
22
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页码：133 / 136
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