Very-low-threshold index-confined planar microcavity lasers

被引:0
|
作者
Deppe, D.G. [1 ]
Huffaker, D.L. [1 ]
Shin, J. [1 ]
Deng, Q. [1 ]
机构
[1] Univ of Texas at Austin, Austin, United States
关键词
Cavity resonators - Current density - Curve fitting - Laser modes - Laser theory - Light - Light emission - Mirrors - Optical variables measurement - Oxidation;
D O I
暂无
中图分类号
学科分类号
摘要
A fabrication process for laterally index-confined planar microcavity lasers is given that results in continuous-wave thresholds as low as 50 μA for a properly tuned cavity (T = 250 K). Characterization of the spontaneous emission mode shows that the lateral confinement, when reduced to the mode size expected for the planar cavity, appears to increase the spontaneous emission coupling to the lasing mode.
引用
收藏
相关论文
共 50 条
  • [31] LOW-THRESHOLD OPERATION OF HEMISPHERICAL MICROCAVITY SINGLE-QUANTUM-WELL LASERS AT 4-K
    MATINAGA, FM
    KARLSSON, A
    MACHIDA, S
    YAMAMOTO, Y
    SUZUKI, T
    KADOTA, Y
    KEDA, M
    APPLIED PHYSICS LETTERS, 1993, 62 (05) : 443 - 445
  • [32] Low-threshold single-mode laser in perovskite microdiscs direct-synthesized into planar microcavity
    Zhang, Jian
    Zhao, Xinchao
    Liu, Qingquan
    Sun, Liaoxin
    Wang, Shaowei
    Shen, Xuechu
    Lu, Wei
    APPLIED PHYSICS LETTERS, 2022, 120 (07)
  • [33] Very-low-threshold 2.4-μm GaInAsSb-AlGaAsSb laser diodes operating at room temperature in the continuous-wave regime
    Salhi, A
    Rouillard, Y
    Angellier, J
    Garcia, M
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (11) : 2424 - 2426
  • [34] VERY-LOW THRESHOLD GRADED-INDEX SEPARATE-CONFINEMENT-HETEROSTRUCTURE STRAINED INGAASP SINGLE-QUANTUM-WELL LASERS
    YAMAMOTO, N
    YOKOYAMA, K
    YAMANAKA, T
    YAMAMOTO, M
    ELECTRONICS LETTERS, 1994, 30 (03) : 243 - 244
  • [35] Wide temperature range linear DFB lasers at 1.3 mu m with very low threshold
    Chen, TR
    Chen, PC
    Ungar, J
    Oh, S
    Luong, H
    BarChaim, N
    15TH IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE - CONFERENCE DIGEST, 1996, : 169 - 170
  • [36] JUNCTION-SIDE UP OPERATION OF (AL)GAINP LASERS WITH VERY LOW THRESHOLD CURRENTS
    UNGER, P
    ROENTGEN, P
    BONA, GL
    ELECTRONICS LETTERS, 1992, 28 (16) : 1531 - 1532
  • [37] HIGH-POWER, VERY LOW THRESHOLD, GAINP/ALGAINP VISIBLE DIODE-LASERS
    SERREZE, HB
    CHEN, YC
    WATERS, RG
    APPLIED PHYSICS LETTERS, 1991, 58 (22) : 2464 - 2466
  • [38] One and three-stack quantum dot lasers with very low threshold current density
    Liu, G.T.
    Stintz, A.
    Li, H.
    Newell, T.C.
    Varangis, P.
    Malloy, K.J.
    Lester, L.F.
    Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest, 2000, : 346 - 347
  • [39] VERY LOW THRESHOLD BURIED HETEROSTRUCTURE QUANTUM WELL LASERS BY LASER-ASSISTED DISORDERING
    EPLER, JE
    THORNTON, RL
    PAOLI, TL
    APPLIED PHYSICS LETTERS, 1988, 52 (17) : 1371 - 1373
  • [40] Low threshold oxide-confined InAs quantum dash ridge waveguide lasers on InP substrates
    Wang, RH
    Stintz, A
    Rotter, TJ
    Malloy, KJ
    Lester, LF
    Gray, AL
    Newell, TC
    Varangis, PM
    LEOS 2001: 14TH ANNUAL MEETING OF THE IEEE LASERS & ELECTRO-OPTICS SOCIETY, VOLS 1 AND 2, PROCEEDINGS, 2001, : 405 - 406