DANGLING-BOND RECOMBINATION AND PHOTOCONDUCTIVITY OF a-Si:H.

被引：0

作者：

Kurova, I.A. ^{[1
]}

Zvyagin, I.P. ^{[1
]}

机构：

[1] Moscow State Univ, Moscow, USSR, Moscow State Univ, Moscow, USSR

来源：

Journal of Non-Crystalline Solids | 1986年 / 90卷 / 1-3期

关键词：

PHOSPHORUS - SEMICONDUCTING FILMS - Doping - SEMICONDUCTOR MATERIALS - Amorphous;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The temperature quenching of the photoconductivity of P-doped glow-discharge a-Si:H films was observed after the prolonged preliminary illumination. To explain it, a recombination model is discussed which takes into account the broadening of the distributions of energies of the dangling-bond states in the mobility gap and the effect of temperature on the optically induced repopulation of these states.

引用

页码：207 / 210

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