KINETICS OF ESTABLISHMENT OF THE MAGNETOCONCENTRATION EFFECT IN EXTRINSIC SEMICONDUCTORS.

Theoretical and experimental investigations were made of the transient process following an abrupt application of an electric field to an extrinsic semiconductor under the magnetoconcentration effect conditions. The experimental investigation was carried out on p- and n-type InSb. The kinetics of changes in the voltage across a sample and of the current through it was studied. The current-voltage characteristics were recorded up to various time intervals from the application of the field and it was found that there was a pronounced N-type region where the fall of the current decreased on increase in the time from the moment of application of the field. The experimental results were in agreement with the theory.