Geometric variations and magnetic field effects on electron energy states of InAs/GaAs quantum rings

被引:0
|
作者
机构
[1] [1,Li, Yiming
[2] Lu, Hsiao-Mei
来源
Li, Y. (ymli@faculty.nctu.edu.tw) | 1600年 / Japan Society of Applied Physics卷 / 42期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] Acousto-electron Effects in the InAs/GaAs Heterostructure with InAs Quantum Dots
    Peleshchak, Roman
    Kuzyk, Oleh
    Dan'kiv, Olesya
    PROCEEDINGS OF THE 2019 IEEE 9TH INTERNATIONAL CONFERENCE ON NANOMATERIALS: APPLICATIONS & PROPERTIES (NAP-2019), PTS 1-2, 2019,
  • [22] Electron radiation effects on InAs/GaAs quantum dot lasers
    Che, Chi
    Han, Qiqi
    Ma, Jing
    Zhou, Yanping
    Yu, Siyuan
    Tan, Liying
    LASER PHYSICS, 2012, 22 (08) : 1317 - 1320
  • [23] GaAs-(Ga, Al) As double quantum rings:: confinement and magnetic field effects
    Culchac, F. J.
    Porras-Montenegro, N.
    Latge, A.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2008, 20 (28)
  • [24] Effect of Shape and Size on Electron Transition Energies for Nanoscale InAs/GaAs Quantum Rings
    Yiming Li
    Hsiao-Mei Lu
    Journal of Computational Electronics, 2003, 2 : 487 - 490
  • [25] Observation of intershell and hybridized energy states in InAs/GaAs quantum dots
    Wang, FZ
    Chen, ZH
    Bai, LH
    Huang, SH
    Xiong, H
    Shen, SC
    Sun, J
    Jin, P
    Wang, ZG
    APPLIED PHYSICS LETTERS, 2005, 87 (09)
  • [26] Effects of a longitudinal magnetic field on spin injection and detection in InAs/GaAs quantum dot structures
    Beyer, J.
    Wang, P. H.
    Buyanova, I. A.
    Suraprapapich, S.
    Tu, C. W.
    Chen, W. M.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2012, 24 (14)
  • [27] Exciton spin manipulation in InAs/GaAs quantum dots:: Exchange interaction and magnetic field effects
    Sénès, M
    Urbaszek, B
    Marie, X
    Amand, T
    Tribollet, J
    Bernardot, F
    Testelin, C
    Chamarro, M
    Gérard, JM
    PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2005, 772 : 1361 - 1362
  • [28] Excited states and energy relaxation in stacked InAs/GaAs quantum dots
    Heitz, R
    Kalburge, A
    Xie, Q
    Grundmann, M
    Chen, P
    Hoffmann, A
    Madhukar, A
    Bimberg, D
    PHYSICAL REVIEW B, 1998, 57 (15): : 9050 - 9060
  • [29] Effect of Shape and Size on Electron Transition Energies for Nanoscale InAs/GaAs Quantum Rings
    Li, Yiming
    Lu, Hsiao-Mei
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2003, 2 (2-4) : 487 - 490
  • [30] Hydrostatic pressure effects on electron states in GaAs-(Ga,Al)As double quantum rings
    Culchac, F. J.
    Porras-Montenegro, N.
    Latge, A.
    JOURNAL OF APPLIED PHYSICS, 2009, 105 (09)