Kinetics of rapid thermal oxidation of silicon

被引：0

作者：

Fukuda, Hisashi ^{[1
]}

Yasuda, Makoto ^{[1
]}

Iwabuchi, Toshiyuki ^{[1
]}

机构：

[1] Oki Electric Industry Co, Ltd, Tokyo, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1992年 / 31卷 / 10期

关键词：

Oxidation - Thin films;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We have proposed, for the first time, a practical model for ultrathin (2 film growth in rapid thermal oxidation (RTO) kinetics. The results showed that the overall RTO growth can be well described by the linear-parabolic model proposed by Deal and Grove [J. Appl. Phys. 36 (1965) 3770]. Moreover, the model proposed indicates that in order to fit the experimental data, the oxide growth in a ramp-up process must be included in the linear-parabolic scheme. As a result, we have succeeded in explaining the RTO growth kinetics in the RTO temperature range from 950 to 1200°C and in a wide thickness range from 15 to 250 A without making any special assumptions. The resultant activation energies for the linear rate constant (B/A) and for the parabolic rate constant (B) are 2.0 eV and 1.74 eV, respectively.

引用

页码：3436 / 3439