Effects of radio frequency bias frequency and radio frequency bias pulsing on SiO2 feature etching in inductively coupled fluorocarbon plasmas

被引：0

作者：

Schaepkens, M. ^{[1
]}

Oehrlein, G.S. ^{[1
]}

Cook, J.M. ^{[2
]}

机构：

[1] Physics Department, University at Albany, Albany, NY 12222, United States

[2] Lam Research Corporation, Fremont, CA 94538-6470, United States

来源：

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 2000年 / 18卷 / 02期

关键词：

Fluorocarbons - Plasma etching - Silica;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The dependence of SiO2 etch rate on feature size, microtrenching effects, and SiO2-to-photoresist selectivities were measured and compared at 1.3 and 10.5 MHz radiofrequency (rf) bias frequencies for otherwise identical conditions. It was observed that microtrenching decreases in the frequency range with increasing bias frequency, while the SiO2-to-resist selectivity can be significantly increased. Results from a study on the effects of rf bias pulsing were presented.

引用

页码：856 / 863