DETERMINATION OF INTERFACE STATE PROPERTIES BY SUBBANDGAP SURFACE PHOTOVOLTAGE SPECTROSCOPY.

被引：0

作者：

Zhang Jian ^{[1
]}

Huang Bingzhong ^{[1
]}

机构：

[1] Zhongshan Univ, China, Zhongshan Univ, China

来源：

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1987年 / 8卷 / 05期

关键词：

BAND STRUCTURE - OXIDES - Thin Films - SEMICONDUCTING SILICON - Photovoltaic Effects - SPECTROSCOPY;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The application of surface photovoltage spectroscopy and its transient characteristics to the study of the distribution and dynamic parameters of interface states has been discussed in detail. In the case of continuous distribution of interface states within bandgap, the photoionization cross sections of electrons (or holes) at Fermi level as well as the profile of the distribution of interface states are obtained. An investigation on the interface between crystal Si and its native oxide (about 10 A) has been performed by this method. The results reveal that the distribution and dynamic parameters of the interface states at this very thin oxide interface differ from those at thick ones.

引用

页码：512 / 519