Gettering of metallic impurities in photovoltaic silicon

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Univ of California at Berkeley, Berkeley, United States ^{[1
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Appl Phys A | / 2卷 / 127-137期

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[41] ACTIVATION AND GETTERING OF INTRINSIC METALLIC IMPURITIES DURING RAPID THERMAL-PROCESSING [J].

HARTITI, B ;

EICHHAMMER, W ;

MULLER, JC ;

SIFFERT, P .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1989, 4 (1-4) :129-132

[42] Gettering Sinks for Metallic Impurities Formed by Carbon-Cluster Ion Implantation in Epitaxial Silicon Wafers for CMOS Image Sensor [J].

Onaka-Masada, Ayumi ;

Okuyama, Ryosuke ;

Shigematsu, Satoshi ;

Okuda, Hidehiko ;

Kadono, Takeshi ;

Hirose, Ryo ;

Koga, Yoshihiro ;

Sueoka, Koji ;

Kurita, Kazunari .

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2018, 6 (01) :1200-1206

[43] INFLUENCE OF EXTENDED DEFECTS AND NATIVE IMPURITIES ON EXTERNAL GETTERING IN POLYCRYSTALLINE SILICON [J].

EHRET, E ;

ALLAIS, V ;

VALLARD, JP ;

LAUGIER, A .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 34 (2-3) :210-215

[44] Simulation of metallic impurity gettering in silicon by MeV ion implantation [J].

Brown, RA ;

Kononchuk, O ;

Rozgonyi, GA .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 148 (1-4) :322-328

[45] Simulation of metallic impurity gettering in silicon by MeV ion implantation [J].

New Jersey Inst of Technology, Newark, United States .

Nucl Instrum Methods Phys Res Sect B, 1-4 (322-328)

[46] Trans-projected-range effect in proximity gettering of impurities in silicon [J].

Gueorguiev, YM ;

Kögler, R ;

Peeva, A ;

Panknin, D ;

Mücklich, A ;

Yankov, RA ;

Skorupa, W .

VACUUM, 2001, 62 (2-3) :309-313

[47] Gettering of metal impurities by using phosphorus diffusion in UMG silicon wafers [J].

Sung Yean Yoon ;

Jeong Kim ;

Kyoon Choi .

Journal of the Korean Physical Society, 2012, 60 :2079-2082

[48] Integrated gettering of metallic contaminants by nanocavities in FZ silicon wafers [J].

Périchaud, I ;

Yakimov, E ;

Martinuzzi, S .

HIGH PURITY SILICON VI, 2000, 4218 :341-347

[49] IMPROVEMENT OF DIFFUSION LENGTH IN POLYCRYSTALLINE PHOTOVOLTAIC SILICON BY PHOSPHORUS AND CHLORINE GETTERING [J].

JASTRZEBSKI, L ;

HENLEY, W ;

SCHIELEIN, D ;

LAGOWSKI, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1995, 142 (11) :3869-3872

[50] GETTERING OF CHROMIUM IMPURITIES IN N+-P SILICON SOLAR-CELLS [J].

SALAMA, AM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) :C112-C112

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