Organic semiconductor complementary logic circuits

被引：0
|
作者：
Lin, Y.-Y. [1 ]
Dodabalapur, A. [1 ]
Sarpeshkar, R. [1 ]
Bao, Z. [1 ]
Li, W. [1 ]
Crone, B. [1 ]
Raju, V.R. [1 ]
Katz, H.E. [1 ]
机构：
[1] Lucent Technologies, Murray Hill, United States
来源：
Annual Device Research Conference Digest | 1999年
关键词：
Computer simulation - Deposition - Fluorine compounds - Semiconductor junctions - Solid state oscillators - Substrates;
D O I：
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学科分类号：
摘要：
The characteristics of all organic complementary circuits are discussed. The circuits were fabricated in an upside down geometry where the interconnections are defined first, followed by the gate metal and the gate insulator. The n-channel material F16CuPc is deposited at substrate temperature of 125 °C with a deposition rate of 1-5 angstroms/s under a vacuum pressure of 2×10-6 torr. The p-channel material is deposited with the substrate held at room temperature with a deposition rate of 1-5 angstroms/s under the same vacuum pressure. The SPICE simulation results for five stage ring oscillators are given.
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页码：166 / 167
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