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- [2] PHOTOCONDUCTION IN HEAVILY DOPED COMPENSATED SEMICONDUCTORS. Soviet physics. Semiconductors, 1982, 16 (11): : 1305 - 1308
- [4] CONDITIONS FOR THE EXCITATION OF RECOMBINATION WAVES IN BOUNDED SEMICONDUCTORS. Soviet physics. Semiconductors, 1982, 16 (10): : 1128 - 1133
- [5] AMBIPOLAR DIFFUSION OF HOT CARRIERS AND NOISE IN SEMICONDUCTORS. Soviet physics. Semiconductors, 1980, 14 (09): : 1046 - 1051
- [6] PARAMETRIC RESONANCE OF ACOUSTIC AND OPTICAL PHONONS IN SEMICONDUCTORS. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1976, 10 (06): : 690 - 692
- [7] APPARATUS FOR THE INVESTIGATION OF DEEP LEVEL PARAMETERS IN SEMICONDUCTORS. Instruments and experimental techniques New York, 1982, 25 (6 pt 2): : 1513 - 1517
- [8] CONTROL OF LASER PULSE DURATION BY NONLINEAR ABSORPTION IN SEMICONDUCTORS. Soviet Journal of Quantum Electronics (English translation of Kvantovaya Elektronika), 1972, 2 (01): : 23 - 26
- [9] THEORY OF THE ELECTRON AMPLIFICATION OF SPIN WAVES IN MAGNETIC SEMICONDUCTORS. Soviet Physics, Solid State (English translation of Fizika Tverdogo Tela), 1980, 22 (01): : 82 - 85
- [10] CARRIER-DENSITY DEPENDENCE OF DYNAMIC MULTIPHONON NONRADIATIVE RECOMBINATION THROUGH DEEP LEVELS IN SEMICONDUCTORS. Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1982, 116 B&C (1-3): : 39 - 44