Positron annihilation and scanning tunneling microscopy used to characterize defects in highly Si-doped GaAs

被引：0
|
作者：
Gebauer, J. [1 ]
Krause-Rehberg, R. [1 ]
Domke, C. [1 ]
Ebert, Ph. [1 ]
Urban, K. [1 ]
机构：
[1] Martin-Luther-Universitaet, Halle-Wittenberg, Halle, Germany
来源：
Materials Science Forum | 1997年 / 258-263卷 / pt 2期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：885 / 892
相关论文
共 50 条
  • [41] Changes of defect and active-dopant concentrations induced by annealing of highly Si-doped GaAs
    Phys Rev B, 8 (4482):
  • [42] Changes of defect and active-dopant concentrations induced by annealing of highly Si-doped GaAs
    Domke, C
    Ebert, P
    Urban, K
    PHYSICAL REVIEW B, 1998, 57 (08): : 4482 - 4485
  • [43] Native defects in n-type Sn-doped GaAs using positron annihilation technique
    Saha, AK
    Gugre, S
    Das, D
    SenGupta, A
    POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS, 2004, 445-6 : 174 - 176
  • [44] SPATIALLY-RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY OF LATERAL P-N-JUNCTIONS PREPARED BY SI-DOPED GAAS USING A PHOTON SCANNING TUNNELING MICROSCOPE
    SAIKI, T
    MONONOBE, S
    OHTSU, M
    SAITO, N
    KUSANO, J
    APPLIED PHYSICS LETTERS, 1995, 67 (15) : 2191 - 2193
  • [45] SEM AND TEM STUDIES OF DEFECTS IN SI-DOPED GAAS SUBSTRATE MATERIAL BEFORE AND AFTER ZN DIFFUSION
    DARBY, DB
    AUGUSTUS, PD
    BOOKER, GR
    STIRLAND, DJ
    JOURNAL OF MICROSCOPY-OXFORD, 1980, 118 (MAR): : 343 - 349
  • [46] A SCANNING-TUNNELING-MICROSCOPY STUDY OF THE DEPOSITION OF SI ON GAAS(001) IMPLICATIONS FOR SI DELTA-DOPING
    AVERY, AR
    HOLMES, DM
    SUDIJONO, JL
    JONES, TS
    FAHY, MR
    JOYCE, BA
    JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 202 - 208
  • [47] Dopant site analysis of heavily Si-doped GaAs using a combination of electron microscopy and synchrotron radiation
    Saito, Genki
    Ishizuka, Akimitsu
    Ohtsuka, Masahiro
    Ito, Shuma
    Okajima, Toshihiro
    Muto, Shunsuke
    JOURNAL OF APPLIED PHYSICS, 2025, 137 (02)
  • [48] Cross-sectional scanning tunneling microscopy of Mn-doped GaAs: Theory and experiment
    Sullivan, JM
    Boishin, GI
    Whitman, LJ
    Hanbicki, AT
    Jonker, BT
    Erwin, SC
    PHYSICAL REVIEW B, 2003, 68 (23)
  • [49] CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY OF DOPED AND UNDOPED ALGAAS/GAAS HETEROSTRUCTURES
    GWO, S
    CHAO, KJ
    SHIH, CK
    APPLIED PHYSICS LETTERS, 1994, 64 (04) : 493 - 495
  • [50] Scanning tunneling microscopy and atomic force microscopy study of graphite defects produced by bombarding with highly charged ions
    Mochiji, K
    Yamamoto, S
    Shimizu, H
    Ohtani, S
    Seguchi, T
    Kobayashi, N
    JOURNAL OF APPLIED PHYSICS, 1997, 82 (12) : 6037 - 6040
12345