Positron annihilation and scanning tunneling microscopy used to characterize defects in highly Si-doped GaAs

被引：0
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作者：
Gebauer, J. [1 ]
Krause-Rehberg, R. [1 ]
Domke, C. [1 ]
Ebert, Ph. [1 ]
Urban, K. [1 ]
机构：
[1] Martin-Luther-Universitaet, Halle-Wittenberg, Halle, Germany
来源：
Materials Science Forum | 1997年 / 258-263卷 / pt 2期
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页码：885 / 892
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