共 50 条
- [33] Bulk micro defects of P/P- epitaxial silicon wafers with nitrogen doped substrates and their gettering behavior SEMICONDUCTOR SILICON 2002, VOLS 1 AND 2, 2002, 2002 (02): : 658 - 669
- [36] Impact ionization in nonuniformly heated silicon p+–n–n+ and n+–p–p+ structures Semiconductors, 2016, 50 : 462 - 465
- [38] Structural defects in p/p+ silicon vapor phase epitaxy PROCEEDINGS OF THE THIRD INTERNATIONAL SYMPOSIUM ON DEFECTS IN SILICON, 1999, 99 (01): : 162 - 171
- [39] Study of the impurity photoconductivity in p-InSb using epitaxial p+ contacts Semiconductors, 2016, 50 : 1005 - 1009
- [40] Gettering efficiencies for Cu and Ni as a function of size and density of oxygen precipitates in p/p- silicon epitaxial wafers APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2001, 73 (02): : 137 - 142