Mo contamination in p/p+ epitaxial silicon wafers

被引：0
|
作者：
机构：
[1] Aoki, Masaki
[2] Itakura, Toru
[3] Sasaki, Nobuo
来源：
Aoki, Masaki | 1600年 / JJAP, Minato-ku, Japan卷 / 34期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] MO CONTAMINATION IN P/P(+) EPITAXIAL SILICON-WAFERS
    AOKI, M
    ITAKURA, T
    SASAKI, N
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (2B): : 712 - 714
  • [2] Gettering of copper and nickel in p/p+ epitaxial wafers
    Hoelzl, R
    Huber, D
    Range, KJ
    Fabry, L
    Hage, J
    Wahlich, R
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2000, 147 (07) : 2704 - 2710
  • [3] RECOMBINATION LIFETIME OF P/P+ EPITAXIAL SILICON
    AMINZADEH, M
    FORBES, L
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (08) : C374 - C374
  • [4] Gap states induced by local oxidation of silicon in iron-contaminated p on p+ epitaxial silicon wafers
    Horikawa, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (12): : 8293 - 8299
  • [5] N+p junction leakage current in p/p+ epitaxial wafers
    Murakami, Y
    Fusegawa, K
    Matsukawa, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (9A): : 5559 - 5560
  • [6] N+p junction leakage current in p/p+ epitaxial wafers
    Murakami, Y., 1600, Japan Society of Applied Physics (42):
  • [7] Iron solubility in boron-doped silicon and Fe gettering mechanism in p/p+ epitaxial wafers
    Shabani, MB
    Shiina, Y
    Shimanuki, S
    Kirscht, FG
    GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY, 2002, 82-84 : 331 - 339
  • [8] Competitive Interaction between Segregation Gettering and Surface Precipitation of Nickel in p/p+ Silicon Epitaxial Wafers
    Torigoe, Kazuhisa
    Ono, Toshiaki
    Nakamura, Kozo
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2015, 4 (09) : Q110 - Q114
  • [9] Dominant iron gettering mechanism in p/p+ silicon wafers
    Lin, W
    Benton, JL
    Pinacho, R
    Ramappa, DA
    Henley, W
    APPLIED PHYSICS LETTERS, 2000, 77 (02) : 241 - 243
  • [10] OXYGEN PRECIPITATION IN P/P+(100) EPITAXIAL SILICON MATERIAL
    WIJARANAKULA, W
    MATLOCK, JH
    MOLLENKOPF, H
    BURKE, P
    FORBES, L
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (09) : 2310 - 2316
12345