InP technology drives millimeter-wave HEMT amplifiers

被引：0
|
作者：
De Raedt, Walter [1 ]
机构：
[1] IMEC, Leuven, Belgium
来源：
Microwaves and RF | 1995年 / 34卷 / 14期
关键词：
Current voltage characteristics - Frequencies - High electron mobility transistors - Microwave measurement - Millimeter wave devices - Monolithic microwave integrated circuits - Passivation - Performance - Semiconducting indium phosphide - Semiconductor device manufacture - Semiconductor device models - Semiconductor device structures;
D O I：
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摘要：
Monolithically-integrated high-electron-mobility transistors (HEMTs) exhibit high operating efficiency, high reliability, compact size, and low weight, the attributes making HEMTs the active devices of choice in a number of millimeter-wave applications. In fact, device measurements recently completed show that pseudomorphic indium-phosphide (InP)-based HEMTs provide broadband amplification at frequencies well into the W-band range.
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