Gate-induced drain leakage currents in metal oxide semiconductor field effect transistors with high-κ dielectric

被引：0
|
作者：
Chang, Sung-Il [1 ,2 ]
Lee, Jongho [1 ]
Shin, Hyungcheol [2 ]
机构：
[1] Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology, 373-1 Kusong-dong, Yusong-gu, Taejon 305-701, Korea, Republic of
[2] School of Electrical Engineering and Computer Science, Kyungpook National University, 1370 Sankyeok-dong, Buk-gu, Daegu, 702-701, Korea, Republic of
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2002年 / 41卷 / 7 A期
关键词：
D O I：
10.1143/jjap.41.4432
中图分类号：
学科分类号：
摘要：
MOSFET devices
引用
收藏
页码：4432 / 4435
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