Al2O3 layers for microelectronics applications

The investigations concern Al2O3 layers produced by Reactive Pulse Plasma (RPP) method on semiconductor substrates (Si, SiC). The layers have been investigated both in terms of structure and electrophysical properties. Ellipsometry, SEM and SIMS methods were used to examine their thickness and refractive index, the structure and the chemical composition respectively. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of MIS structures were measured. The obtained layers show satisfactory mechanical and electrophysical properties. We have developed a technology for producing MIS transistors with these layers as gate dielectrics, and the electrical parameters of the transistors have been determined as well as their distribution. The parameters of the plasma process have been related to the distribution of electrical parameters of transistors. © 2002 Sage Publications.