Growth of wurtzite GaN films on α-Al2O3 substrates using light-radiation heating metal-organic chemical vapor deposition

被引：0

作者：

Shen, B. ^{[1
]}

Zhou, Y.G. ^{[1
]}

Chen, Z.Z. ^{[1
]}

Chen, P. ^{[1
]}

Zhang, R. ^{[1
]}

Shi, Y. ^{[1
]}

Zheng, Y.D. ^{[1
]}

Tong, W. ^{[2
]}

Park, W. ^{[2
]}

机构：

[1] Dept. Phys. Lab. Solid Stt. M., Nanjing University, Nanjing 210093, China

[2] Phosphor Technol. Ctr. of Excellence, Georgia Institute of Technology, Atlanta, GA 30332-0560, United States

来源：

Applied Physics A: Materials Science and Processing | 1999年 / 68卷 / 05期

关键词：

Carrier concentration - Carrier mobility - Epitaxial growth - Light - Metallorganic chemical vapor deposition - Photoluminescence - Radiation - Sapphire - Semiconducting gallium compounds - Substrates - Temperature - X ray diffraction;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Epitaxial growth of high-quality hexagonal GaN films on sapphire substrates using light-radiation heating metal-organic chemical vapor deposition (LRH-MOCVD) is first reported. The deposition temperature is 950°C, about 100°C lower than that in normal rf-heating MOCVD growth. The FWHM of GaN (0002) peak of the X-ray diffraction rocking curve is 8.7 arc min. Photoluminescence spectrum of GaN film shows that there is a very strong band-edge emission and no 'yellow-band' luminescence. Hall measurement indicates that the n-type background carrier concentration of GaN film is 1.7 × 1018 cm-3 and the Hall mobility of it is 121.5 cm2/V s. It is suggested that the radiation of light in GaN growth enhances the dissociation of ammonia and decreases the disadvantages of the parasite reaction between trimethylgallium and ammonia.

引用

页码：593 / 596