GaN/SiC quasi-substrates for GaN-based LEDs

被引：0
作者：
Schwegler, V. [1 ]
Kirchner, C. [1 ]
Seyboth, M. [1 ]
Kamp, M. [1 ]
Ebeling, K.J. [1 ]
Melnik, Yu.V. [2 ]
Nikolaev, A.E. [3 ]
Tsvetkov, D. [4 ]
Dmitriev, V.A. [2 ,3 ]
机构：
[1] Department of Optoelectronics, University of Ulm, D-89069 Ulm, Germany
[2] TDI, Inc., Gaithersburg, MD 20877, United States
[3] A.F. Ioffe Phys.-Tech. Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia
[4] Crystal Growth Research Center, 194021 St. Petersburg, Russia
来源：
Physica Status Solidi (A) Applied Research | 1999年 / 176卷 / 01期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：99 / 102
相关论文
共 50 条
  • [31] GaN-based optoelectronics on silicon substrates
    Krost, A
    Dadgar, A
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 93 (1-3): : 77 - 84
  • [32] Nanoscale Patterned Sapphire Substrates with Cortex-Like Nanostructures for GaN-Based LEDs
    Lin, Yu-Sheng
    Yeh, J. Andrew
    OMN2011: 16TH INTERNATIONAL CONFERENCE ON OPTICAL MEMS AND NANOPHOTONICS, 2011, : 63 - 64
  • [33] Relationship between threading dislocations and the optical properties in GaN-based LEDs on Si Substrates
    K. S. Jeon
    S. -W. Kim
    D. -H. Ko
    H. Y. Ryu
    Journal of the Korean Physical Society, 2015, 67 : 1085 - 1088
  • [34] Integration of Photonic Crystals on GaN-Based Blue LEDs Using Silicon Mold Substrates
    Orita, Kenji
    Takase, Yuji
    Fukushima, Yasuyuki
    Usuda, Manabu
    Ueda, Tetsuzo
    Takigawa, Shinichi
    Tanaka, Tsuyoshi
    Ueda, Daisuke
    Egawa, Takashi
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2008, 44 (9-10) : 984 - 989
  • [35] Enhanced luminescence from GaN-based blue LEDs grown on grooved sapphire substrates
    Feng, ZH
    Lau, KM
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (09) : 1812 - 1814
  • [36] Enhanced output power of GaN-based LEDs with nano-patterned sapphire substrates
    Chen, J. J.
    Su, Y. K.
    Lin, C. L.
    Chen, S. M.
    Li, W. L.
    Kao, C. C.
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2008, 20 (13-16) : 1193 - 1195
  • [37] Relationship between threading dislocations and the optical properties in GaN-based LEDs on Si Substrates
    Jeon, K. S.
    Kim, S. -W.
    Ko, D. -H.
    Ryu, H. Y.
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2015, 67 (07) : L1085 - L1088
  • [38] Ultrafast Laser Lift-off of Semipolar GaN-based LEDs on Sapphire Substrates
    Xiang W.
    Sun H.
    Wang S.
    Zhou H.
    Shuai L.
    Ye Y.
    Zhang Y.
    Faguang Xuebao/Chinese Journal of Luminescence, 2024, 45 (04): : 681 - 687
  • [39] Analyses of light extraction efficiency in GaN-based LEDs grown on patterned sapphire substrates
    Xu, Chenglong
    Yu, Tongjun
    Yan, Jian
    Yang, Zhiyuan
    Li, Xingbin
    Tao, Yuebin
    Fu, Xingxing
    Chen, Zhizhong
    Zhang, Guoyi
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, 2012, 9 (3-4): : 757 - 760
  • [40] Complete HVPE experimental investigations: Cartography of SAG GaN towards quasi-substrates or nanostructures
    Chelda-Gourmala, O.
    Trassoudaine, A.
    Andre, Y.
    Bouchoule, S.
    Gil, E.
    Tourret, J.
    Castelluci, D.
    Cadoret, R.
    JOURNAL OF CRYSTAL GROWTH, 2010, 312 (12-13) : 1899 - 1907
12345