Characterization of defects in Li-diffused n-type GaAs

被引：0

作者：

Yang, B.H. ^{[1
]}

Egilsson, T. ^{[1
]}

Kristjansson, S. ^{[1
]}

Petursson, J. ^{[1
]}

Gislason, H.P. ^{[1
]}

机构：

[1] Univ of Iceland, Reykjavik, Iceland

来源：

Materials Science Forum | 1994年 / 143-4卷 / pt 2期

关键词：

Semiconducting gallium arsenide;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：839 / 844

共 5 条

[1] Neutron irradiation induced defects in low free carrier concentration epitaxially grown n-GaAs
Auret, F.Danie
Goodman, Stewart A.
Wilson, Albertus
Myburg, Gerrit
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1994, 33 (5 A): : 2633 - 2634
[2] Study of cold dopant sources for gas source MBE. The use of disilane as an N-type dopant of AlxGa1-xAs (x=0-0.28) and trimethylgallium as a P-type dopant of GaAs
Sandhu, Adarsh, 1600, (29):
[3] Characterization of GaAs P-N structures grown on GaAs(111)A substrates using controlled all-silicon doping
Fujita, Kazuhisa
Watanabe, Toshihide
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1995, 34 (2 A): : 430 - 433
[4] Effect of annealing method on vacancy-type defects in Si-implanted GaAs studied by a slow positron beam
Shikata, Shin-ichi
Fujii, Satoshi
Wei, Long
Tanigawa, Shoichiro
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1992, 31 (03): : 732 - 736
[5] Photocapacitance measurement on intentionally undoped n-type Ga0.9Al0.1As grown by stoichiometry control method
Nishizawa, Jun-ichi, 1753, JJAP, Minato-ku, Japan (33):