OBSERVATION OF TRANSIENT BEHAVIOR OF GaAs MBE GROWTH BY RHEED OSCILLATION.

This paper discusses the transient behavior of the GaAs single monolayer growth observed using RHEED specular beam intensity oscillation. The time required for the 1st monolayer growth just after Ga cell shutter opening depends strongly on the growth surface location. At a fixed location, the first monolayer growth time increases with the substrate temperature and decreases as the As flux intensity is increased. The first monolayer growth time varies according to the electron beam incident directions. In contrast, the growth rate of each succeeding layer does not depend on these parameters, and is simply determined by the impinging rate of Ga atoms. A similar phenomenon was observed in AlAs growth. The anomalous characteristics of the first monolayer growth were interpreted while taking into consideration the atomic-step density limited growth process.