共 50 条
- [31] ACCUMULATION OF DIVACANCIES IN SILICON SUBJECTED TO PROLONGED NEUTRON-IRRADIATION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (08): : 922 - 923
- [34] Complexes defects induced by neutron irradiation of Cz-silicon APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2020, 126 (05):
- [35] ELECTRON-PARAMAGNETIC RESONANCE OF NEUTRON-IRRADIATION INDUCED DEFECTS IN GALLIUM-ARSENIDE REVUE DE PHYSIQUE APPLIQUEE, 1983, 18 (11): : 703 - 707
- [36] Neutron induced defects in silicon detectors characterized by DLTS and TSC methods Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1996, 377 (2-3): : 258 - 264
- [37] Neutron induced defects in silicon detectors characterized by DLTS and TSC methods NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1996, 377 (2-3): : 258 - 264
- [40] Neutron irradiation defects in Czochralski silicon PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 3, 2009, 6 (03): : 669 - 676