Time development and flux dependence of neutron-irradiation induced defects in silicon pad detectors

被引:0
|
作者
Žontar, D. [1 ]
Cindro, V. [1 ]
Kramberger, G. [1 ]
Mikuž, M. [1 ]
机构
[1] Department of Physics, Jozef Stefan Inst., Univ. L., Ljubljana, Slovenia
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:51 / 55
相关论文
共 50 条
  • [21] CAPACITANCE SPECTROSCOPY INVESTIGATION OF DEFECTS FORMED IN N-TYPE SILICON BY NEUTRON-IRRADIATION
    VASILEV, AV
    SMAGULOVA, SA
    SHAIMEEV, SS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (11): : 1279 - 1281
  • [22] INFLUENCE OF NEUTRON-IRRADIATION TEMPERATURE ON THE FORMATION OF STRUCTURE DEFECTS IN SILICON GROWN BY THE CZOCHRALSKI METHOD
    KARUMIDZE, GS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (11): : 1227 - 1229
  • [23] NEUTRON-IRRADIATION DAMAGE OF SILICON-CARBIDE
    SUZUKI, T
    YANO, T
    MORI, T
    MIYAZAKI, H
    ISEKI, T
    FUSION TECHNOLOGY, 1995, 27 (03): : 314 - 325
  • [24] PHOSPHORUS DOPING OF SILICON BY MEANS OF NEUTRON-IRRADIATION
    HAAS, EW
    SCHNOLLER, MS
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (08) : 803 - 805
  • [25] Irradiation temperature dependence of production efficiency of defects induced in neutron-irradiated silicon carbides
    Okada, M
    Atobe, K
    Nakagawa, M
    Kanazawa, S
    Kanno, I
    Kimura, I
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2000, 166 : 399 - 403
  • [26] Measurement of the Trapping Time Constants in Neutron-Irradiated Silicon Pad Detectors
    Weber, Jens
    Klingenberg, Reiner
    2006 IEEE NUCLEAR SCIENCE SYMPOSIUM CONFERENCE RECORD, VOL 1-6, 2006, : 143 - 147
  • [27] NEUTRON-IRRADIATION INDUCED PHOTOLUMINESCENCE FROM SILICON CRYSTAL GROWN IN AMBIENT HYDROGEN
    ZHONG, L
    WANG, ZG
    WAN, SK
    LIN, LY
    SOLID STATE COMMUNICATIONS, 1990, 74 (11) : 1225 - 1228
  • [28] ISOCHRONAL RECOVERY IN CU AND CU-AU AFTER NEUTRON-IRRADIATION .2. DOSE DEPENDENCE OF FAST-NEUTRON-INDUCED DEFECTS
    PIANI, CSB
    ASPELING, JC
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1983, 69 (1-2): : 29 - 38
  • [29] EFFECT OF NEUTRON-IRRADIATION ON SPECTROMETRIC CHARACTERISTICS OF SI(LI) DETECTORS
    SOLOVEV, SM
    TYVIN, LI
    EISMONT, VP
    ATOMNAYA ENERGIYA, 1972, 33 (05): : 918 - 919
  • [30] DISORDERING OF SILICON-CARBIDE DURING NEUTRON-IRRADIATION
    NIKOLAENKO, VA
    GORDEYEV, VG
    KUZNETSOV, VN
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 27 (3-4): : 163 - 165