Improved In0.5Ga0.5P/GaAs double heterostructure-emitter bipolar transistor using emitter edge-thinning technique

被引：0

作者：

Lin, Yu-Shyan ^{[1
]}

Wu, Yu-Huei ^{[1
]}

Su, Jan-Shing ^{[1
]}

Hsu, Wei-Chou ^{[1
]}

Ho, Shing-Dong ^{[1
]}

Lin, Wei ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Tainan, Taiwan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1997年 / 36卷 / 4 A期

关键词：

Theoretical; (THR); -; Experimental; (EXP);

D O I：

暂无

中图分类号：

学科分类号：

摘要：

An improved In0.5Ga0.5P/GaAs double heterostructure-emitter bipolar transistor (DHEBT) has been fabricated by low-pressure metallorganic chemical vapor deposition (LP-MOCVD). The 100 angstroms undoped GaAs spacers grown on both sides of the base are used to improve the recombination of p-n interface and to increase the common-emitter current gain. The emitter edge-thinning technique is used to reduce the surface recombination current and improve the current gain. A current gain of 180 with an offset voltage as low as 60 mV are achieved. Meanwhile, Gummel plot is shown to understand the composition of collector and base currents.

引用

页码：2007 / 2009