Progress in InGaAs-GaAs selective-area MOCVD toward photonic integrated circuits

被引：0
|
作者：
Univ of Illinois at Urbana-Champaign, Urbana, United States [1 ]
机构：
来源：
IEEE J Sel Top Quantum Electron | / 3卷 / 874-884期
关键词：
Manuscript received April 4; 1997; revised June 30; 1997. This work was supported by the National Science Foundation under Grant ECD89-43166 and Grant DMR89-20 538; by the ARPA Center for Optoelectronic Science and Technology under Grant MDA972-94-1-004; and by the Joint Services Electronics Program under Contract N0014-90-J-1270;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
67
引用
收藏
相关论文
共 50 条
  • [1] Progress in InGaAs-GaAs selective-area MOCVD toward photonic integrated circuits
    Coleman, JJ
    Lammert, RM
    Osowski, ML
    Jones, AM
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (03) : 874 - 884
  • [2] InGaAs-GaAs quantum-well lasers with monolithically integrated intracavity electroabsorption modulators by selective-area MOCVD
    Univ of Illinois, Urbana, United States
    IEEE Photonics Technol Lett, 1 (78-80):
  • [3] High-Speed InGaAs Photodetectors by Selective-Area MOCVD Toward Optoelectronic Integrated Circuits
    Geng, Yu
    Feng, Shaoqi
    Poon, Andrew W. O.
    Lau, Kei May
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2014, 20 (06) : 36 - 42
  • [4] InGaAs-GaAs quantum-well lasers with monolithically integrated intracavity electroabsorption modulators by selective-area MOCVD
    Lammert, RM
    Forbes, DV
    Smith, GM
    Osowski, ML
    Coleman, JJ
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (01) : 78 - 80
  • [5] Integrated photonic devices by selective-area MOCVD
    Osowski, ML
    Coleman, JJ
    OPTOELECTRONIC INTEGRATED CIRCUITS II, 1997, 3290 : 8 - 19
  • [6] STRAINED-LAYER INGAAS-GAAS-ALGAAS LASERS WITH MONOLITHICALLY INTEGRATED PHOTODIODES BY SELECTIVE-AREA MOCVD
    LAMMERT, RM
    MENA, PV
    FORBES, DV
    OSOWSKI, ML
    KANG, SM
    COLEMAN, JJ
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (03) : 247 - 250
  • [7] BROAD-BAND EMISSION FROM INGAAS-GAAS-ALGAAS LED WITH INTEGRATED ABSORBER BY SELECTIVE-AREA MOCVD
    OSOWSKI, ML
    LAMMERT, RM
    FORBES, DV
    ACKLEY, DE
    COLEMAN, JJ
    ELECTRONICS LETTERS, 1995, 31 (17) : 1498 - 1499
  • [8] Fabrication and characterization of InGaAs-GaAs quantum wire arrays by selective-area metalorganic chemical vapor deposition
    Osowski, ML
    Panepucci, R
    Reuter, EE
    Bishop, SG
    Adesida, I
    Coleman, JJ
    EMERGING COMPONENTS AND TECHNOLOGIES FOR ALL-OPTICAL PHOTONIC SYSTEMS II, 1997, 2918 : 166 - 181
  • [9] Lateral inhomogeneity in InGaAs-GaAs quantum wire arrays by selective-area metalorganic chemical vapor deposition
    Osowski, ML
    Panepucci, R
    Turnbull, DA
    Gu, SQ
    Jones, AM
    Bishop, SG
    Adesida, I
    Coleman, JJ
    APPLIED PHYSICS LETTERS, 1996, 68 (08) : 1087 - 1089
  • [10] SELECTIVE-AREA EPITAXY FOR GAAS-ON-INP OPTOELECTRONIC INTEGRATED-CIRCUITS (OEICS)
    OSULLIVAN, PJ
    ALLAN, DA
    BIRDSALL, P
    GILBERT, MJ
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (06) : 1179 - 1185
12345